Industry Analysis

The GaN power device market is expected to witness market growth at a rate of 49.95% in the forecast period of 2021 to 2028. Data Bridge Market Research report on the GaN power device market provides analysis and insights regarding the various factors expected to be prevalent throughout the forecast period while providing their impacts on the market’s growth.  

Market Insights

• Gallium nitride (GaN) transistors have progressed as an improved performance alternative to silicon-based transistors, due to their capacity of constructing more dense devices for an assumed resistance value and breakdown voltage in comparison to silicon devices.
• Major factors that are expected to boost the growth of the GaN power device market in the forecast period are the vast revenue generation from the customer electronics and automotive verticals and the wide bandgap property of GaN material supporting innovation.
• Furthermore, the achievement of GaN in the RF-power electronics, the rise in the acceptance, and the growing adoption of GaN RF power devices in the military, defense, and aerospace verticals are further propelling the growth of the GaN power device market.

Industry Segmentation

The GaN power device market is segmented on the basis of device type, voltage range, application, vertical, technology, wafer material and wafer size. The growth among segments helps you analyse niche pockets of growth and strategies to approach the market and determine your core application areas and the difference in your target markets. 

• On the basis of device type, the GaN power device market is segmented into power device, RF power device, GaN power modules, GaN power discrete devices, GaN power ICs. Power device is further sub segmented into discrete power device and integrated power device. RF power device is further sub segmented into discrete RF power device and integrated RF power device. GaN power discrete devices is further sub segmented into GaN power non-RF devices and GaN power RF devices. GaN power ICs is further sub segmented into MMIC and hybrid.
• On the basis of voltage range, the GaN power device market is segmented into 200 volt, 200–600 volt, 600 volt),
• On the basis of application, the GaN power device market is segmented into power drives, supply and inverter, radio frequency. Power drives is further sub segmented into EV drives, industrial drives and light detection and ranging. Supply and inverter are further sub segmented into switch-mode power supply, inverter, wireless charging and EV charging. Radio frequency is further sub segmented into radio frequency front-end module, repeater/booster/das and radar and satellite.
• On the basis of vertical, the GaN power device market is segmented into telecommunications, industrial, automotive, renewable, consumer and enterprise, military, defense and aerospace, medical.
• On the basis of technology, the GaN power device market is segmented into 4h-SIC MOSFET, HEMT, others.
• On the basis of wafer material, the GaN power device market is segmented into GaN SiC, GaN Si.
• On the basis of wafer size, the GaN power device market is segmented into less than 150mm, 150mm-500mm, more than 500 mm.

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Market Country Level Analysis

• The countries covered in the GaN power device market report are the U.S., Canada, and Mexico in North America, Brazil, Argentina, and the Rest of South America as part of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe in Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC)  in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of the Middle East and Africa (MEA).  
• North America dominates the GaN power device market due to the rise in investments by the defense and aerospace sector in research and development.
• Asia Pacific is projected to observe a significant amount of growth in the GaN power device market due to the swift technological developments that are leading to the augmented demand for effective and high-performance RF components.

Get full access to the report @ https://www.databridgemarketresearch.com/reports/global-gan-power-device-market

Industry Share Analysis

The major players covered in the GaN power device market report are

Cree, Inc., Infineon Technologies AG, Qorvo, Inc., MACOM, Microsemi, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation., GaN Systems, Navitas Semiconductor., Toshiba Electronic Devices Storage Corporation, Exagan., VisIC Technologies, Integra Technologies, Inc., Transphorm Inc., GaNpower, Analog Devices, Inc., Panasonic Corporation, Texas Instruments Incorporated., Ampleon, Northrop Grumman, Dialog Semiconductor, among other domestic and global players. Market share data is available for global, North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA), and South America separately. DBMR analysts understand competitive strengths and provide competitive analysis for each competitor separately.

Major TOC Of the Report

• Chapter One: Introduction
• Chapter Two: Industry analysis
• Chapter Three: Market Overview
• Chapter Four: Industry segmentation
• Chapter Five: Industry share analysis

Get TOC Details: https://www.databridgemarketresearch.com/toc/?dbmr=global-gan-power-device-market

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